Semiconductor structure and method for forming the same
AssigneeSemiconductor Manufacturing International (Shanghai) Corporation
InventorsJaewoo KIM, Byungsup SHIM, Saiya ZHU
Life of this patent
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Abstract
A semiconductor structure and a method for forming the same, where the semiconductor structure includes a substrate; a channel layer structure suspended above the substrate, where in the vertical direction, the channel layer structure includes one or more spaced channel layers; a repair layer covering the surfaces of the channel layers; and a gate structure located on the substrate and spanning the channel layer structure, where the gate structure surrounds the channel layers along the extension direction of the gate structure and covers the repair layer.
Claims20
A semiconductor structure, comprising:
- a substrate;
- a channel layer structure suspended above the substrate, wherein, in a vertical direction, the channel layer structure includes one or more spaced channel layers;
- a repair layer, covering surfaces of the channel layers;
- and
- a gate structure located on the substrate and across the channel layer structure, wherein the gate structure surrounds the channel layers along an extension direction of the gate structure and covers the repair layer.
A method of forming a semiconductor structure, comprising:
- providing a substrate;
- forming a channel layer structure suspended above the substrate, wherein the channel layer structure includes one or more spaced channel layers in a vertical direction;
- forming a repair layer covering surfaces of the channel layers;
- and
- forming a gate structure on the substrate and across the channel layer structure, wherein the gate structure surrounds the channel layers along an extension direction of the gate structure and covers the repair layer.
Dependencies are inferred from the claim text.