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US 2025/0338501 A1Published application
Semiconductor device having a crystalline thin-film ferroelectric layer and method of manufacture
AssigneeSK hynix Inc.
InventorWon Tae KOO
Life of this patent
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Abstract
A semiconductor device includes a first interconnection line extending in a first horizontal direction; a second interconnection line extending in a second horizontal direction, the first horizontal direction and the second horizontal direction intersect each other; and a memory cell disposed between the first interconnection line and the second interconnection line. The memory cell includes a lower electrode; a crystalline ferroelectric layer on the lower electrode; and an upper electrode on the crystalline ferroelectric layer.
Claims14
A semiconductor device comprising:
- a first interconnection line extending in a first direction;
- a second interconnection line extending in a second direction, the first direction and the second direction intersecting each other;
- and
- a memory cell disposed between the first interconnection line and the second interconnection line,
- wherein the memory cell comprises:
- a lower electrode;
- a crystalline ferroelectric layer on the lower electrode;
- and
- an upper electrode on the crystalline ferroelectric layer.
6 more elements
Dependencies are inferred from the claim text.