Semiconductor device and method for fabricating the same

A semiconductor device comprising:

• a semiconductor substrate;
• an active region including an isolation layer which is formed in the semiconductor substrate and a protrusion which is defined by the isolation layer, spaced apart from another protrusion by the isolation layer, and disposed at a higher level than an upper surface of the isolation layer;
• a buried gate structure formed in the semiconductor substrate to cross the isolation layer and the active region and have an upper surface at a lower level than the protrusion of the active region;
• first and second pads suitable for covering the protrusion of the active region;
• a first contact formed in an upper portion of the first pad and a conductive structure in an upper portion of the first contact;
• and
• a second contact formed in an upper portion of the second pad.