US 2025/0338481 A1 · MEMORY DEVICE, AND SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME

Abstract

Disclosed are a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes: a substrate, where the substrate includes a plurality of active structures spaced apart along a first direction and a second direction, each of the plurality of active structures including a first active part and a second active part, and the substrate includes a first surface, each of the second active parts extending, along the corresponding first active part, towards the first surface and being provided with a first end surface in a direction facing the first surface; a plurality of contact structures, the plurality of contact structures being arranged on the first end surfaces of the second active parts; and a plurality of barrier layers arranged on the first surface and covering side walls of part of the second active parts and side walls of part of the plurality of contact structures.

Claims15

Dependent claims

A semiconductor structure, comprising:

a substrate, the substrate comprising a plurality of active structures spaced apart along a first direction and a second direction, wherein each of the plurality of active structures comprises a first active part and a second active part,
the substrate comprises a first surface, and each of the second active parts extends, along the corresponding first active part, towards the first surface and is provided with a first end surface in a direction facing the first surface;
a plurality of contact structures, the plurality of contact structures being arranged on the first end surfaces of the second active parts;
and
a plurality of barrier layers, arranged on the first surface and covering side walls of part of the second active parts and side walls of part of the plurality of contact structures.

2 more elements

A method for manufacturing a semiconductor structure, comprising:

providing a substrate;
forming, in the substrate, a plurality of active structures spaced apart along a first direction and a second direction, each of the plurality of active structures comprising a first active part and a second active part, wherein
the substrate comprises a first surface, and each of the second active parts extends, along the corresponding first active part, towards the first surface and is exposed to the first surface;
forming a plurality of barrier layers circumferentially around the second active parts, the plurality of barrier layers being arranged on the first surface and exposing first end surfaces of the second active parts;
and
forming a plurality of contact structures, the plurality of contact structures being arranged on the first end surfaces of the second active parts, and the plurality of barrier layers covering side walls of part of the second active parts and side walls of part of the plurality of contact structures.

3 more elements

Dependencies are inferred from the claim text.

Memory device, and semiconductor structure and method for manufacturing same

Life of this patent

Memory device, and semiconductor structure and method for manufacturing same

Life of this patent

Abstract

Claims15