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US 2025/0331202 A1Published application
Semiconductor devices including capacitor and methods of manufacturing the semiconductor devices
AssigneeSamsung Electronics Co., Ltd.
InventorsGihee Cho, Jungoo Kang, Sangyeol Kang, Hyunsuk Lee
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Abstract
Semiconductor devices including a capacitor and methods of forming the same are provided. The semiconductor devices may include a capacitor that include a lower electrode, an upper electrode on the lower electrode, and a dielectric layer extending between the lower electrode and the upper electrode. The lower electrode may include a doped region that contacts the dielectric layer, and the doped region of the lower electrode is configured to increase a capacitance of the capacitor.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a substrate;
- forming a lower electrode that extends in a vertical direction on the substrate;
- forming a doped region in a surface portion of the lower electrode;
- forming a dielectric layer on the doped region;
- and
- forming an upper electrode on the dielectric layer,
- wherein the lower electrode comprises a doped region that contacts the dielectric layer,
- wherein a dopant concentration in the doped region of the lower electrode is highest adjacent to an interface between the doped region of the lower electrode and the dielectric layer.
5 more elements
Dependencies are inferred from the claim text.