Semiconductor device, electronic chip, and electronic device

A semiconductor component, comprising a substrate, a first buffer layer, a second buffer layer, and a channel layer that are disposed in a stacked manner, wherein

• the first buffer layer comprises at least two first buffer sub-layers that are disposed in the stacked manner, and a second buffer sub-layer is disposed in the stacked manner between the at least two first buffer sub-layers;
• and
• a first material is used for each of the at least two first buffer sub-layers, a second material is used for the second buffer sub-layer, and elements comprised in the first material is different from elements comprised in the second material,
• wherein the thickness of each first buffer sub-layer ranges from 5 nm to 300 nm;
• the thickness of the second buffer sub-layer ranges from 5 nm to 50 nm;
• a thickness of the first buffer layer is less than or equal to 1200 nm;
• a thickness of the second buffer layer ranges from 500 nm to 2000 nm;
• and
• a thickness of the channel layer ranges from 50 nm to 1000 nm.

An electronic chip, comprising a passive device and a semiconductor component that is electrically connected to the passive device, the semiconductor component comprising:

• a substrate, a first buffer layer, a second buffer layer, and a channel layer that are disposed in a stacked manner, wherein
• the first buffer layer comprises at least two first buffer sub-layers that are disposed in the stacked manner, and a second buffer sub-layer is disposed in the stacked manner between the at least two first buffer sub-layers;
• and
• a first material is used for each of the at least two first buffer sub-layers, a second material is used for the second buffer sub-layer, and elements comprised in the first material is different from elements comprised in the second material,
• wherein the thickness of each first buffer sub-layer ranges from 5 nm to 300 nm;
• the thickness of the second buffer sub-layer ranges from 5 nm to 50 nm;
• a thickness of the first buffer layer is less than or equal to 1200 nm;
• a thickness of the second buffer layer ranges from 500 nm to 2000 nm;
• and
• a thickness of the channel layer ranges from 50 nm to 1000 nm.

An electronic device, comprising a circuit board and an electronic chip disposed on the circuit board,

• the electronic chip comprising:
• a passive device and a semiconductor component that is electrically connected to the passive device,
• the semiconductor component comprising:
• a substrate, a first buffer layer, a second buffer layer, and a channel layer that are disposed in a stacked manner, wherein
• the first buffer layer comprises at least two first buffer sub-layers that are disposed in the stacked manner, and a second buffer sub-layer is disposed in the stacked manner between the at least two first buffer sub-layers;
• and
• a first material is used for each of the at least two first buffer sub-layers, a second material is used for the second buffer sub-layer, and elements comprised in the first material is different from elements comprised in the second material,
• wherein the thickness of each first buffer sub-layer ranges from 5 nm to 300 nm;
• the thickness of the second buffer sub-layer ranges from 5 nm to 50 nm;
• a thickness of the first buffer layer is less than or equal to 1200 nm;
• a thickness of the second buffer layer ranges from 500 nm to 2000 nm;
• and
• a thickness of the channel layer ranges from 50 nm to 1000 nm.