Semiconductor device, manufacturing method thereof, and memory system

A memory system, comprising:

• a semiconductor device, comprising:
• a semiconductor structure comprising a semiconductor body extending along a first direction;
• and
• a conductive structure located on a side of the semiconductor body along the first direction,
• wherein the conductive structure comprises a first part and a second part arranged along a second direction;
• the first part is in contact with an end of the semiconductor body;
• a size of a portion of the first part close to the second part in a third direction is different from a size of a portion of the second part close to the first part in the third direction;
• the second direction intersects the third direction, and the first direction is perpendicular to a plane formed by the second direction and the third direction;
• and
• a memory controller connected with the semiconductor device and configured to control the semiconductor device.

A method of manufacturing a semiconductor device, comprising:

• forming a semiconductor body extending along a first direction;
• and
• forming a conductive structure located on a side of the semiconductor body along the first direction, the semiconductor body and the conductive structure being configured to form a semiconductor structure,
• wherein the conductive structure comprises a first part and a second part arranged along a second direction;
• the first part is in contact with an end of the semiconductor body;
• a size of a portion of the first part close to the second part in a third direction is different from a size of a portion of the second part close to the first part in the third direction;
• the second direction intersects the third direction, and the first direction is perpendicular to a plane formed by the second direction and the third direction.