Method and apparatus for removing contamination

A method for removing contamination from a lithography device, comprising:

• removing large contaminant particles from a surface of a wafer clamp by a cleaning stone and generating small residue particles, wherein the wafer clamp includes a plurality of burls on the surface of the wafer clamp;
• charging the small residue particles to generate electrically-charged small residue particles using x-rays or an ion beam;
• charging a bi-polar electrode to generate an electric field;
• and
• spinning the bi-polar electrode in proximity to the wafer clamp to absorb the electrically-charged small residue particles settled between the plurality of burls from the surface of the wafer clamp.

A lithography apparatus for cleaning a wafer chuck, comprising:

• a cleaning stone configured to remove large contaminant particles from a surface of the wafer chuck and generate small residue particles, wherein the wafer chuck has a plurality of burls on a surface of the wafer chuck, and the small residue particles settle between the plurality of burls on a surface of the wafer chuck;
• a charge-monitor system configured to charge the small residue particles to generate electrically-charged small residue particles using x-rays or an ion beam;
• and
• a bi-polar electrode having a symmetrical surface with at least two axes of symmetry, and comprising a first and a second pole portions that are respectively formed at a first and a second ends of the symmetrical surface and oppositely charged to generate an electric field, wherein the bi-polar electrode is configured to spin in proximity to the wafer chuck to absorb the electrically-charged small residue particles.