Euv lithography apparatus and operating method for mitigating contamination
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsI-Hsiung HUANG, Yung-Cheng CHEN, Tung-Li WU
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Abstract
An extreme ultra violet (EUV) lithography apparatus includes a light source that generates an EUV light beam, a scanner that receives the light from a junction with the light source and directs the light to a reticle stage, and a debris catcher disposed on a EUV beam path between the light source and the scanner. The debris catcher includes a network membrane including a plurality of nano-fibers.
Claims20
A method of operating an extreme ultra violet (EUV) lithography apparatus, the method comprising:
- measuring an EUV intensity through a network membrane in a slot or frame of a debris catcher, the network membrane including a plurality of nano-fibers comprising a transition metal dichalcogenide;
- measuring an EUV intensity through an empty opening in the debris catcher;
- and
- moving the debris catcher to a different slot or frame with a network membrane comprising a transition metal dichalcogenide when a difference in the EUV intensity through the network membrane from the EUV intensity through the opening exceeds a threshold.
A method of manufacturing a semiconductor device using an extreme ultra violet (EUV) lithography apparatus including an EUV light source, comprising:
- generating an EUV light beam from the EUV light source;
- directing the light beam to a reticle stage;
- measuring an EUV intensity of the light beam through a network membrane in a slot or frame of a debris catcher, the network membrane including a plurality of nano-fibers comprising a nanotube of a transition metal dichalcogenide;
- measuring an EUV intensity of the light beam through an empty slot or frame of the debris catcher;
- determining a difference between the EUV intensity through the network membrane and the EUV intensity through the empty slot or frame;
- moving the debris catcher to a different slot or frame with a network membrane when the difference exceeds a threshold;
- and
- directing a patterned light beam from the reticle stage to a photoresist-coated substrate.
A method of manufacturing a semiconductor device using an extreme ultra violet (EUV) lithography apparatus including an EUV light source, comprising:
- generating EUV light from the EUV light source, and directing the EUV light to a reticle using a scanner;
- moving a debris catcher comprising a plurality of slots or frames to an opening, at least two of the plurality of slots or frames include a network membrane including a plurality of nano-fibers comprising a nanotube of a transition metal dichalcogenide, and measuring an EUV intensity through the opening;
- moving the debris catcher to a slot or frame with the network membrane and measuring an EUV intensity through the network membrane;
- determining a difference between the intensity through the network membrane to the intensity through the opening, and moving the debris catcher to another slot or frame with a network membrane when the difference exceeds a threshold;
- and
- directing EUV light reflected off the reticle to a photoresist-coated substrate.
Dependencies are inferred from the claim text.