Low temperature plasma deposition of silicon-containing films using hydrogen peroxide

Abstract

Provided are methods for increasing the deposition rate and improving the film properties of silicon-containing films via plasma-enhanced atomic layer deposition (PEALD) by utilization of hydrogen peroxide. In particular, an exposure to hydrogen peroxide before, during, or after the plasma exposure step of a low temperature PEALD process utilizing silicon-containing compounds results in increased deposition rates and superior film characteristics as compared to PEALD processes using plasma alone. Additionally, the disclosed process may utilize non-oxidizing plasmas, increasing the range of substrates to which the process can be applied relative to those compatible with oxidizing plasmas.

Dependencies are inferred from the claim text.