Forming an indium chalcogenide film

A method, comprising:

• depositing an indium-cyclopentadienyl compound for a first duration at a first temperature and a first pressure on a substrate;
• removing the indium-cyclopentadienyl compound;
• depositing a second compound comprising a selenium compound or a tellurium compound for a second duration at the first temperature and the first pressure on the substrate;
• and
• removing the second compound.

A method, comprising:

• depositing an indium-cyclopentadienyl compound for a first duration at a first temperature and a first pressure on a substrate;
• removing the indium-cyclopentadienyl compound;
• depositing an ammonia compound for a second duration;
• depositing a selenium compound for a third duration at the first temperature and the first pressure on the substrate;
• and
• removing the selenium compound.

A method, comprising:

• forming a stack of layers over a substrate, the stack of layers comprising layers of a first material and a second material;
• forming one or more word lines in the stack of materials using a metallization process, and
• forming one or more memory cells in the stack of materials, each memory cell of the one or more memory cells coupled between a respective word line of the one or more word lines and a respective conductive pillar of one or more conductive pillars, wherein forming a memory material of the one or more memory cells comprises:
• depositing an indium-cyclopentadienyl compound for a first duration at a first temperature and a first pressure on a substrate;
• removing the indium-cyclopentadienyl compound;
• depositing a selenium compound for a second duration at the first temperature and the first pressure on the substrate;
• and
• removing the selenium compound.