Semiconductor Device and Method of Forming an Embedded Redistribution Layer

A semiconductor device, comprising:

• a semiconductor die;
• a first dielectric layer formed over the semiconductor die;
• a second dielectric layer formed over the first dielectric layer;
• a trench formed in the second dielectric layer;
• a via opening formed to expose a contact pad of the semiconductor die within the trench;
• a seed layer formed over the second dielectric layer, wherein the seed layer extends into the trench and via opening;
• a conductive material deposited in the via opening and trench, wherein the seed layer is limited to within the footprint of the conductive material;
• and
• a photoresist layer formed over the conductive material in the trench, wherein a portion of the conductive material is exposed from the photoresist layer.

A semiconductor device, comprising:

• a semiconductor die;
• a dielectric layer formed over the semiconductor die;
• a trench formed in the dielectric layer;
• a via opening formed to expose a contact pad of the semiconductor die within the trench;
• a seed layer formed over the dielectric layer, wherein the seed layer extends into the trench and via opening;
• a conductive material deposited in the via opening and trench, wherein the seed layer is limited to within the footprint of the conductive material;
• and
• a photoresist layer formed over the conductive material in the trench, wherein a portion of the conductive material is exposed from the photoresist layer.

A semiconductor device, comprising:

• a semiconductor die;
• a dielectric layer formed over the semiconductor die;
• a trench formed in the dielectric layer;
• a via opening formed to expose a contact pad of the semiconductor die within the trench;
• a seed layer formed over the dielectric layer, wherein the seed layer extends into the trench and via opening;
• and
• a conductive material deposited in the via opening and trench, wherein the seed layer is limited to within the footprint of the conductive material.