Power mosfet provided with a variable transparency edge ring formed by a high-depth auto-aligned implant

An electronic device, comprising:

• a semiconductor body, having a first electrical conductivity and a first doping value, and provided with a front side, wherein the semiconductor body is of a material having a lattice structure with spatial symmetry;
• an active area configured to accommodate, in use, a conductive channel of the electronic device;
• an edge region, surrounding the active area and in structural continuity with the active area, and accommodating at least in part:
• a first edge termination region having a second electrical conductivity opposite to the first electrical conductivity and which extends into the semiconductor body starting from the front side, the first edge termination region comprising at least a first sub-region and a second sub-region having a second electrical conductivity, separated from each other by a portion of the semiconductor body having the first electrical conductivity;
• and
• a damaged region extending at the portion of the semiconductor body between the first sub-region and the second sub-region, facing the front side, the damaged region having an amorphous lattice structure or a lattice structure with no spatial symmetry.