Diffraction-based pupil determination for optimization of lithographic processes

Abstract

Methods, apparatuses, and software are disclosed for optimization of a source and/or mask as used in lithographic manufacturing and patterning processes. One method includes determining a first pupil having a central obscuration (CO), determining a diffraction order (DO) based on a target design and a mask model, determining a first diffraction pattern (DP) based on the DO and the first pupil, the first DP including overlapping regions of diffracted light, determining a second DP based on the DO and the first pupil, and determining an initial pupil based on the first DP and the second DP, the initial pupil including at least some of the overlapping regions.

Dependencies are inferred from the claim text.