Memory device and operating method thereof

An operating method of a memory device, comprising:

• storing a first data bit in a first memory cell;
• applying a voltage signal carrying a first search bit to the first memory cell;
• and
• comparing first data bit and the first search bit to generate a current signal flowing through the first memory cell,
• wherein when each of the first data bit and the first search bit has a first logic value, the current signal has a first current level,
• when the first data bit has the first logic value and the first search bit has a second logic value, the current signal has a second current level larger than the first current level,
• when the first data bit has the first logic value and the first search bit has a third logic value different from the second logic value, the current signal has the second current level, and
• a difference between the first logic value and the second logic value is equal to a difference between the third logic value and the first logic value.

An operating method of a memory device, comprising:

• setting a first threshold voltage of a first memory cell to store a first data bit in the first memory cell;
• applying a voltage signal carrying a first search bit to the first memory cell;
• and
• generating a current signal according to the first search bit and the first threshold voltage,
• wherein the first data bit has a first logic value when the first threshold voltage has a first threshold voltage level,
• the first data bit has a second logic value different from the first logic value when the first threshold voltage has a second threshold voltage level,
• when each of the first data bit and the first search bit has the first logic value, the current signal has a first current level,
• when the first data bit has the second logic value and the first search bit has the first logic value the current signal has a second current level larger than the first current level, and
• when the first threshold voltage has a third threshold voltage level between the first threshold voltage level and the second threshold voltage level, the current signal has the first current level.