Buried conductive structure in semiconductor substrate

A method, comprising:

• depositing a metal fill layer through a bottom portion of a substrate via an opening;
• forming a metal capping layer on a top surface of the metal fill layer in the opening, wherein a top surface of the metal capping layer is above a top surface of the substrate;
• forming a source/drain (S/D) region on the substrate, wherein the S/D region comprises a first silicide layer in a top portion of the S/D region and a second silicide layer in a bottom portion of the S/D region, and wherein the second silicide layer is in contact with the top surface of the metal capping layer;
• forming a S/D contact structure in contact with a top surface of the first silicide layer.

A method, comprising:

• forming, on a substrate, a region adjacent to a nanostructured gate layer and a nanostructured channel layer;
• depositing a first silicide layer on the region;
• forming a first conductive structure disposed on the first silicide layer;
• depositing a second silicide layer on a bottom portion of the region;
• and
• forming a second conductive structure disposed on a bottom surface of the second silicide layer and through the substrate.