Cmos image sensing device

A complementary metal-oxide-semiconductor (CMOS) image sensing device comprising:

• a semiconductor substrate including a plurality of pixel regions;
• an insulating film disposed within the semiconductor substrate and disposed between the plurality of pixel regions;
• and
• a first active region disposed between the plurality of pixel regions,
• wherein a photoelectronic conversion element and a transfer transistor are disposed in at least one of the plurality of pixel regions,
• wherein the photoelectronic conversion element is connected to the first active region by the transfer transistor,
• wherein the first active region and a first floating diffusion region are connected by at least one of the transfer transistors,
• wherein the first floating diffusion region is connected to a gate of a source follower transistor, and the first floating diffusion region is connected to a second floating diffusion region through a first transistor, and
• wherein the first transistor is turned off when an operating mode is a first mode, and the first transistor is turned on when the operating mode is a second mode different from the first mode.