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US 2025/0221007 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsByunghoon NA, Haeryong KIM, Woonghyeon PARK, Jaeho LEE, Jooho LEE
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Abstract
Provided is a semiconductor device. The semiconductor device includes a semiconductor layer including silicon, a first silicide layer in the semiconductor layer, and a second silicide layer provided on the first silicide layer. The first silicide layer includes a metal other than titanium, and the second silicide layer includes TiSi2 having a C54 crystallization structure. A contact resistance of the semiconductor device may be reduced.
Claims21
A semiconductor device comprising:
- a semiconductor layer including silicon;
- a first silicide layer on the semiconductor layer;
- and
- a second silicide layer including titanium and having a crystallization structure on the first silicide layer,
- wherein the first silicide layer includes a metal other than titanium, and the second silicide layer includes TiSi2 having a C54 crystallization structure.
2 more elements
A method of manufacturing a semiconductor device, the method comprising:
- forming a semiconductor layer including silicon;
- forming a first silicide layer on the semiconductor layer;
- forming a second silicide layer including titanium on the first silicide layer;
- and
- crystallizing the second silicide layer,
- wherein the first silicide layer includes a metal other than titanium, and the second silicide layer includes TiSi2 having a C54 crystallization structure.
3 more elements
(canceled)
Dependencies are inferred from the claim text.