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US 2025/0220918 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeRenesas Electronics Corporation
InventorShibun TSUDA
Life of this patent
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Abstract
A semiconductor device includes a ferroelectric memory cell, and the ferroelectric memory cell includes a select transistor and a memory transistor. A gate dielectric film of the select transistor includes a ferroelectric film, and a gate dielectric film of the memory transistor includes a ferroelectric film.
Claims18
A semiconductor device comprising:
- a semiconductor substrate;
- and
- a ferroelectric memory cell formed on the semiconductor substrate,
- wherein the ferroelectric memory cell comprises:
- a first gate dielectric film formed on the semiconductor substrate;
- a first gate electrode formed on the first gate dielectric film;
- a second gate dielectric film formed on the semiconductor substrate;
- a second gate electrode formed on the second gate dielectric film;
- a source region formed in the semiconductor substrate;
- and
- a drain region formed in the semiconductor substrate,
- wherein the first gate dielectric film includes a first ferroelectric film, and
- wherein the second gate dielectric film includes a second ferroelectric film.
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A method of manufacturing a semiconductor device, the method comprising:
- (a) preparing a semiconductor substrate;
- (b) forming a third ferroelectric film on the semiconductor substrate;
- (c) forming a conductive film on the third ferroelectric film;
- (d) processing the conductive film to form a first gate electrode and to form a second gate electrode;
- (e) after the (d), processing the third ferroelectric film to form a first ferroelectric film between the first gate electrode and the semiconductor substrate and to form a second ferroelectric film between the second gate electrode and the semiconductor substrate;
- and
- (f) forming a source region and a drain region in the semiconductor substrate,
- wherein the first gate electrode, the second gate electrode, the first ferroelectric film, the second ferroelectric film, the source region and the drain region configure a ferroelectric memory cell.
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Dependencies are inferred from the claim text.