Imaging apparatus, distance measuring apparatus, and fabrication method for fabricating imaging apparatus

An imaging apparatus comprising:

• a substrate;
• a photoelectric converter provided in the substrate;
• a first transfer transistor connected to the photoelectric converter and including a first control terminal;
• and
• a second transfer transistor connected to the photoelectric converter and including a second control terminal, wherein
• the photoelectric converter includes a first semiconductor region of a first conductivity type provided in the substrate, and
• in a plan view of the substrate,
• the first control terminal and the second control terminal overlap the first semiconductor region and are aligned in a first direction, and
• in the first direction, a total of a length of an overlapping portion of the first control terminal and the first semiconductor region and a length of an overlapping portion of the second control terminal and the first semiconductor region is at least 20% of a length of the photoelectric converter.

A fabrication method for fabricating an imaging apparatus, the fabrication method comprising:

• forming a photoelectric converter including a first semiconductor region of a first conductivity type provided in a substrate;
• and
• forming a first transfer transistor and a second transfer transistor that are connected to the photoelectric converter, wherein
• in the forming of the first transfer transistor and the second transfer transistor, each of a first control terminal of the first transfer transistor and a second control terminal of the second transfer transistor is formed to overlap the first semiconductor region in a plan view of the substrate.