Semiconductor device
AssigneeNippon Telegraph and Telephone Corporation
InventorsWataru Kobayashi, Manabu Mitsuhara, Shigeru Kanazawa
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Abstract
The semiconductor device includes a substrate made of a semi-insulating compound semiconductor, a first optical active element formed on the substrate, a second optical active element formed on the substrate, and an optical waveguide that optically connects the first optical active element and the second optical active element. The semiconductor device further includes an etching stop layer formed over the entire region on the substrate. The first optical active element, the optical waveguide, and the second optical active element are formed on the etching stop layer.
Claims19
1-5. (canceled)
A semiconductor device comprising:
- a substrate made of a semi-insulating compound semiconductor;
- a first optical active element on the substrate, the first optical active element including a first lower semiconductor layer of a first conductivity type, a first active layer on the first lower semiconductor layer, and a first upper semiconductor material of a second conductivity type on the first active layer;
- a second optical active element on the substrate, the second optical active element including a second lower semiconductor layer of the first conductivity type, a second active layer on the second lower semiconductor layer, and a second upper semiconductor material on the second active layer;
- and
- an optical waveguide on the substrate and disposed between the first optical active element and the second optical active element, the optical waveguide including a semi-insulating or undoped third lower semiconductor layer, a third active layer on the third lower semiconductor layer, and a third upper semiconductor material on the third active layer, wherein the optical waveguide provides an electric separation part between the first optical active element and the second optical active element, and the optical waveguide optically connects the first optical active element and the second optical active element.
A semiconductor device comprising:
- a substrate made of a semi-insulating compound semiconductor;
- a first optical active element on the substrate, the first optical active element including a first lower semiconductor layer, a first active layer on the first lower semiconductor layer, and an upper semiconductor layer on the first active layer, wherein the first lower semiconductor layer and the upper semiconductor layer have opposite conductivity types;
- a second optical active element on the substrate, the second optical active element including a second lower semiconductor layer and a second active layer on the second lower semiconductor layer;
- and
- an optical waveguide on the substrate and optically connecting the first optical active element and the second optical active element, the optical waveguide including third lower semiconductor layer and a third active layer on the third lower semiconductor layer, wherein the optical waveguide provides an electric separation part between the first optical active element and the second optical active element.
Dependencies are inferred from the claim text.