Dielectric windows for groups of vias through semiconductor substrates

A semiconductor component, comprising:

• a semiconductor substrate;
• circuitry formed at least in part from a doped portion of the semiconductor substrate;
• a dielectric portion comprising one or more dielectric materials formed through the semiconductor substrate;
• and
• a plurality of vias each comprising one or more conductive materials formed through the dielectric portion, wherein at least one of the plurality of vias is coupled with the circuitry formed at least in part from the doped portion of the semiconductor substrate.

A semiconductor component formed by a process, comprising:

• forming a first cavity through a semiconductor substrate of the semiconductor component;
• forming a dielectric portion based at least in part on forming one or more dielectric materials in the first cavity;
• forming a plurality of second cavities through the dielectric portion;
• and
• forming a plurality of vias based at least in part on forming one or more conductive materials in each of the plurality of second cavities.

A semiconductor system, comprising:

• a first semiconductor component, comprising:
• a semiconductor substrate;
• first circuitry formed at least in part from a doped portion of the semiconductor substrate;
• a dielectric portion comprising one or more dielectric materials formed through the semiconductor substrate;
• and
• a plurality of first vias each comprising one or more conductive materials formed through the dielectric portion;
• and
• a second semiconductor component bonded with the first semiconductor component, the second semiconductor component, comprising:
• a plurality of second vias;
• and
• second circuitry coupled with the first circuitry based at least in part on a fusion between surfaces of the plurality of second vias and surfaces of the plurality of first vias.

A semiconductor system, comprising:

• a first semiconductor component, comprising:
• a semiconductor substrate;
• a memory array;
• first circuitry operable for accessing the memory array;
• a dielectric portion comprising one or more dielectric materials formed through the semiconductor substrate;
• and
• a plurality of vias coupled with the first circuitry and each comprising one or more conductive materials formed through the dielectric portion;
• and
• a second semiconductor component bonded with the first semiconductor component, the second semiconductor component, comprising:
• a plurality of contacts at a surface of the second semiconductor component;
• and
• second circuitry operable for accessing the memory array, the second circuitry coupled with the first circuitry based at least in part on a fusion between the plurality of contacts and surfaces of the plurality of vias.