Semiconductor device structure and methods of forming the same
OwnerTzu-Ging LINinventor
Life of this patent
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Abstract
A method for forming a semiconductor device structure is described. The method includes removing a portion of a fin structure to form a first section of an isolation trench in the fin structure, passivating exposed surfaces of the first section of the isolation trench to modify an etch selectivity of the exposed surfaces to a first etchant, removing a portion of the passivated surface at a bottom of the first section of the isolation trench using the first etchant, removing a portion of the substrate to form a second section of the isolation trench by a second etchant, and filling the isolation trench with a dielectric material.
Claims20
A method for forming a semiconductor device structure, comprising:
- removing a portion of a fin structure to form a first section of an isolation trench in the fin structure;
- passivating exposed surfaces of the first section of the isolation trench to modify an etch selectivity of the exposed surfaces to a first etchant;
- removing a portion of the passivated surface at a bottom of the first section of the isolation trench using the first etchant;
- removing a portion of the substrate to form a second section of the isolation trench by a second etchant;
- and
- filling the isolation trench with a dielectric material.
A method for forming a semiconductor device structure, comprising:
- (1) forming a first fin structure and a second fin structure on a first side of a substrate, each first and second fin structure comprising a plurality of a first semiconductor layers and a plurality of a second semiconductor layers alternatingly stacked;
- (2) forming a source/drain feature on the first side of the substrate between the first fin structure and the second fin structure;
- (3) removing portions of the plurality of the first semiconductor layers and the plurality of the second semiconductor layers from the first fin structure to form an isolation trench having a first depth;
- (4) forming a passivation layer on sidewalls and a bottom surface of the isolation trench;
- (5) removing the passivation layer from the bottom surface of the isolation trench to expose a portion of the substrate;
- (6) removing the passivation layer and the portion of the substrate to extend the isolation trench from the first depth to a second depth;
- (7) filling the isolation trench with a dielectric material;
- (8) removing the plurality of the second semiconductor layers from the second fin structure;
- (9) surrounding each of the first semiconductor layer of the second fin structure with a gate electrode layer;
- (10) forming an opening from a second side of the substrate to expose the source/drain feature;
- and
- (11) filling the opening with a conductive material to form a backside via contact for the source/drain feature, wherein the isolation trench and the backside via contact are parallelly arranged and separated from each other by a constant gap along the boundaries of the isolation trench and the backside via contact.
A semiconductor device structure, comprising:
- a fin structure formed on a substrate;
- a source/drain feature disposed adjacent the fin structure and over the substrate;
- an isolation trench extending from a front side of the substrate towards a backside of the substrate;
- and
- a backside via contact extending from the backside of the substrate towards and in contact with the source/drain feature,
- wherein the backside via contact and the isolation trench are parallelly arranged and separated from each other by a constant gap along the boundaries of the backside via contact and the isolation trench.
Dependencies are inferred from the claim text.