Semiconductor device with catalytic conductive layer and method for fabricating the same
AssigneeNanya Technology Corporation
InventorWEI-YU CHEN
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Abstract
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; an indentation inwardly positioned in the substrate and including a bottom surface and two sidewalls; a catalytic conductive layer positioned on the bottom surface of the indentation. The bottom surface of the indentation and a top surface of the substrate are parallel to each other. The two sidewalls of the indentation are substantially vertical.
Claims20
A semiconductor device, comprising:
- a substrate;
- an indentation inwardly positioned in the substrate and comprising a bottom surface and two sidewalls;
- and
- a catalytic conductive layer positioned on the bottom surface of the indentation;
- wherein the bottom surface of the indentation and a top surface of the substrate are parallel to each other;
- wherein the two sidewalls of the indentation are substantially vertical.
A semiconductor device, comprising:
- a substrate;
- a first trench inwardly positioned in the substrate and comprising a bottom surface and two sidewalls;
- and
- a catalytic conductive layer positioned on the bottom surface of the first trench;
- wherein the bottom surface of the indentation and a top surface of the substrate are parallel to each other;
- wherein the two sidewalls of the first trench are substantially vertical;
- wherein an aspect ratio of the first trench is between about 4:1 and about 12:1.
A method for fabricating a semiconductor device, comprising:
- providing a substrate;
- forming a catalytic conductive layer on the substrate;
- patterning the catalytic conductive layer to form an opening exposing an exposed portion of the substrate, while leaving a covered portion of the substrate covered by the catalytic conductive layer;
- performing a trench-etching process to recess the covered portion of the substrate, resulting in a first trench;
- removing the catalytic conductive layer;
- and
- forming an isolation layer in the first trench.
Dependencies are inferred from the claim text.