Substrate processing method, method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus

A non-transitory computer-readable recording medium storing a program that causes, by a computer, a processing apparatus to perform:

• (a) forming a metal-containing film in a reaction vessel by performing:
• (a1) supplying a material gas containing metal and halogen into the reaction vessel;
• (a2) supplying a reducing gas into the reaction vessel while performing (a1);
• and
• (a3) supplying a reactive gas into the reaction vessel,
• wherein (a1), (a2) and (a3) are performed a predetermined number of times in (a);
• (b) supplying a process gas into the reaction vessel so as to perform:
• (b-1) forming a first film on a surface of the metal-containing film;
• and
• (c) forming a metal-containing multi-layer film structure in the reaction vessel by performing (a) and (b) a predetermined number of times.

A processing apparatus comprising:

• a reaction vessel;
• a gas supplier through which a material gas containing metal and halogen, a reducing gas, a reactive gas and a process gas are supplied into the reaction vessel;
• and
• a controller configured to be capable of controlling the gas supplier to perform:
• (a) forming a metal-containing film in the reaction vessel by performing:
• (a1) supplying the material gas containing metal and halogen into the reaction vessel;
• (a2) supplying the reducing gas into the reaction vessel while performing (a1);
• and
• (a3) supplying the reactive gas into the reaction vessel,
• wherein (a1), (a2) and (a3) are performed a predetermined number of times in (a);
• (b) supplying the process gas into the reaction vessel so as to perform:
• (b-1) forming a first film on a surface of the metal-containing film;
• and
• (c) forming a metal-containing multi-layer film structure in the reaction vessel by performing (a) and (b) a predetermined number of times.