Thin film shielding agent, method of forming thin film using thin film shielding agent, semiconductor substrate including thin film, and semiconductor device including semiconductor substrate

Abstract

The present invention relates to a thin film shielding agent, a thin film-forming composition including the thin film shielding agent, a method of forming a thin film using the thin film shielding agent, a semiconductor substrate including the thin film, and a semiconductor device including the semiconductor substrate. According to the present invention, by applying the thin film shielding agent, the reaction speed may be improved, and the thin film growth rate may be appropriately reduced. Accordingly, even when a thin film is formed on a substrate having a complex structure under high-temperature conditions, step coverage and the thickness uniformity of the thin film may be greatly improved, and a seamless thin film may be formed. In addition, by reducing impurities, film quality may be improved.

Dependencies are inferred from the claim text.