Microelectronic assemblies with selective metallization for glass cores

Abstract

Selective metallization for fabricating conductive vias in glass cores, as well as related devices, are disclosed. In one aspect, a method for fabricating a conductive via in a glass core using selective metallization includes forming an opening in the glass core, the opening extending from a surface of the glass core (e.g., from the top surface) towards an opposite surface of the glass core (e.g., towards the bottom surface), lining sidewalls of the opening with a seed material, depositing a passivation material onto the surface of the glass core from which the opening lined with the seed material extends into the glass core, and subsequently filling the opening with a conductive fill material. The passivation material is a material that reduces or prevents deposition of the conductive fill material thereon.

Dependencies are inferred from the claim text.