Semiconductor die with buried electrical interconnections
AssigneeNXP B.V.
InventorsDouglas Michael Reber, Rishi Bhooshan
Life of this patent
Estimating the term…
Abstract
One or more electrical interconnects are formed beneath a device region within a volume of semiconductor material in which electronic devices are formed. The buried interconnects extended in a lateral direction parallel to surfaces of the die toward an edge of the semiconductor die. Such buried interconnects can be exposed at edges of the die to provide electrical contacts along those edges and can be coupled to electronic devices formed within the device region as alternatives to or in addition to contacts formed on top or bottom surfaces of the die.
Claims17
An electronic component, comprising:
- a first semiconductor die having an upper surface, a lower surface, and a first volume of semiconductor material between the upper surface and the lower surface;
- electronic devices integrally formed in a first device region that forms part of the first volume of semiconductor material;
- a first electrically-conductive buried interconnect formed within the first volume of semiconductor material between the first device region and the lower surface if the first semiconductor die and extending from an interior portion of the first semiconductor die to a first edge of the first semiconductor die along a lateral direction that is parallel to the upper and lower surfaces of the first semiconductor die;
- wherein the first edge extends between the upper surface and the lower surface of the first semiconductor die;
- and
- wherein the first buried interconnect is exposed at the first edge of the first semiconductor die.
An electronic component, comprising:
- a first semiconductor die having an upper surface, a lower surface, and a first volume of semiconductor material disposed between the upper surface and the lower surface;
- electronic devices integrally formed in a first device region that forms part of the first volume of semiconductor material;
- and
- a first electrically-conductive buried interconnect formed within the first volume of semiconductor material between the first device region and the lower surface of the first semiconductor die, the first buried interconnect extending along a lateral direction that is parallel to the upper and lower surfaces of the first semiconductor die;
- wherein the first buried interconnect is electrically coupled to one or more of the electronic devices of the first device region.
Dependencies are inferred from the claim text.