Atomic layer etching of silicon oxide at cryogenic temperature
AssigneeApplied Materials, Inc.
InventorsSonam Dorje SHERPA, Mir ABDULLA AL GALIB, Alok RANJAN
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Abstract
Embodiments of the disclosure include a method for forming a feature on a substrate includes exposing a portion of a silicon containing layer formed over the substrate through an opening formed though a masking layer to a carbon-free fluorine containing gas to convert the exposed portion of the silicon containing layer to a reactive portion, and etching the reactive portion by exposing the reactive portion of the silicon containing layer to a plasma formed from an inert gas.
Claims20
A method for forming a feature on a substrate comprising:
- exposing a portion of a silicon containing layer formed over the substrate through an opening formed though a masking layer to a carbon-free fluorine containing gas to convert the exposed portion of the silicon containing layer to a reactive portion;
- and
- etching the reactive portion by exposing the reactive portion of the silicon containing layer to a plasma formed from an inert gas.
A method for forming a feature on a substrate comprising:
- exposing a portion of a silicon containing layer formed over the substrate through a masking layer formed over the silicon containing layer to hydrogen fluoride (HF) vapor to convert the exposed portion of the silicon containing layer to a reactive portion;
- and
- etching the reactive portion by exposing the reactive portion of the silicon containing layer to a plasma formed from argon (Ar).
A processing chamber comprising:
- a controller;
- and
- a memory for storing instructions, which, when executed by the controller, causes the controller to perform a method for forming a feature on a substrate, the method comprising:
- exposing a portion of a silicon containing layer formed over the substrate through an opening formed though a masking layer to a carbon-free fluorine containing gas to convert the exposed portion of the silicon containing layer to a reactive portion;
- and
- etching the reactive portion by exposing the reactive portion of the silicon containing layer to a plasma formed from an inert gas.
Dependencies are inferred from the claim text.