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US 2025/0210366 A1Published application
Manufacturing method of semiconductor device
AssigneeKioxia Corporation
InventorHakuba KITAGAWA
Life of this patent
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Abstract
An etching method according to the present embodiment includes etching a structure from inside of a hole or a slit provided in the structure, using a chemical etching solution containing an acid and a polymer.
Claims20
An etching method comprising etching a structure from inside of a hole or a slit provided in the structure, using a chemical etching solution containing an acid and a polymer.
A manufacturing method of a semiconductor device, the method comprising etching a structure from inside of a hole or a slit provided in the structure, using a chemical etching solution containing an acid and a polymer.
Dependencies are inferred from the claim text.