Gate terminal methods and structures

A process for making a transistor gate, comprising:

• providing a substrate and a dielectric stack formed about a channel,
• depositing a gate terminal stack about the dielectric stack, the gate terminal stack having at least one metallic nitride having an exposed surface;
• and
• depositing a film of a dioxide rich oxide into the outer surface using an oxygen containing plasma.

A computing system, comprising:

• a memory;
• and
• a processor coupled to the memory, the processor having circuitry formed from a plurality of P-type metal oxide semiconductor (MOS) transistors each having a gate structure including:
• a dielectric stack having at least one dielectric layer;
• and
• a terminal stack disposed on the dielectric stack, the terminal stack having:
• at least one layer including a metal nitride layer with an outer surface, and
• an oxidation layer formed on the metal nitride layer outer surface, the oxidation layer comprising at least 50% metallic-dioxide.