Plasma processing apparatus

A plasma processing apparatus comprising:

• a chamber;
• a first bias power source configured to supply a first bias signal;
• a second bias power source configured to supply a second bias signal;
• a substrate supporter for supporting a substrate and an edge ring, inside the chamber;
• an impedance adjustment mechanism;
• and
• an electrical path,
• wherein the substrate supporter is configured to include:
• a first region supporting the substrate,
• a second region provided around the first region and supporting the edge ring,
• a first bias electrode provided in the first region,
• a second bias electrode provided in the second region, and
• an impedance adjustment electrode provided in the second region and grounded, and
• wherein the impedance adjustment mechanism includes:
• a first impedance adjustment mechanism controlling the first bias signal,
• an isolator connected between the impedance adjustment electrode and the first impedance adjustment mechanism and blocking the second bias signal, and
• a second impedance adjustment mechanism controlling the second bias signal,
• wherein the isolator and the first impedance adjustment mechanism, and the second impedance adjustment mechanism are connected in parallel, and are configured to be connected to the impedance adjustment electrode, and
• the electrical path is configured to connect the first bias power source and the second bias power source, to the first bias electrode and the second bias electrode.