Group iii nitride laminate and method of producing group iii nitride laminate
AssigneeSumitomo Chemical Company, Limited
InventorTaiki YAMAMOTO
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Abstract
A group III nitride laminate, including: an underlying substrate; a first layer which is provided on the underlying substrate and contains aluminum nitride; and a second layer which is provided on the first layer and contains gallium nitride, wherein the thickness of the first layer is 11.0 nm or more, and in a region corresponding to a thickness of the first layer, an AlN abundance ratio, which is a ratio of the amount of the aluminum nitride to the total amount of the aluminum nitride and the gallium nitride is less than 78%.
Claims12
A group III nitride laminate, comprising:
- an underlying substrate;
- a first layer which is provided on the underlying substrate and contains aluminum nitride;
- and
- a second layer which is provided on the first layer and contains gallium nitride,
- wherein the thickness of the first layer is 11.0 nm or more, and
- in a region corresponding to a thickness of the first layer, an AlN abundance ratio, which is a ratio of the amount of the aluminum nitride to the total amount of the aluminum nitride and the gallium nitride is less than 78%.
A method of producing a group III nitride laminate, comprising:
- forming a first layer containing aluminum nitride on an underlying substrate;
- and
- forming a second layer containing gallium nitride on the first layer,
- wherein in the formation of the first layer, the first layer is formed so that an AlN abundance ratio, which is a ratio of the amount of the aluminum nitride to the total amount of the aluminum nitride and the gallium nitride, in a region corresponding to a thickness of the first layer is less than 78%, while a thickness of the first layer is set to 11.0 nm or more.
Dependencies are inferred from the claim text.