Chamber arrangements including backpressure controllers, semiconductor processing systems including chamber arrangements, and methods of forming semiconductor structures using chamber arrangements having backpressure controllers

A method of forming a semiconductor device structure, comprising:

• at a chamber arrangement including a chamber body;
• a mass flow controller (MFC) arrangement connected to the chamber body including a first inject MFC device and a second inject MFC device, the first inject MFC device coupled to the chamber body and the second inject MFC device coupled to the chamber body and arranged fluidly in parallel with the first inject MFC device;
• and a bypass conduit with backflow controller (BPC) arranged therealong fluidly in parallel with the chamber body and the MFC arrangement, one of the first inject MFC device and the second inject MFC device operatively coupled to the BPC;
• seating a substrate within the chamber body;
• flowing a first process fluid into the chamber body using the first inject MFC device and the second inject MFC device;
• forming a semiconductor structure on the substrate using the first process fluid;
• and
• throttling backpressure within a bypass conduit arranged fluidly in parallel with the MFC arrangement and the chamber arrangement with the BPC using a supply pressure measurement acquired by the one of the first inject MFC device and the second inject MFC device.