Micro-leds configured for operation at wavelengths in the far-uvc spectrum

Abstract

A light emitting diode (LED) includes a semiconductor structure comprising at least one epitaxial layer that is configured to generate far-UVC light, and respective electrical contacts on first and second surfaces of the semiconductor structure. One or more dimensions of the at least one epitaxial layer in a lateral direction are within an order of magnitude of a thickness of the at least one epitaxial layer in a vertical direction. A primary light extraction surface may include at least one sidewall of the semiconductor structure that extends between the first and second surfaces and is configured to emit the far-UVC light. Related devices, arrays thereof, and fabrication methods are also discussed.

Dependencies are inferred from the claim text.