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AssigneeNuvoton Technology Corporation Japan
InventorsSatoru FUJII, Shunsaku MURAOKA, Masahiro MORIMOTO, Satoshi AWAMURA
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An artificial intelligence processing device includes: a substrate; an operation circuit such as a multiply-accumulate operation circuit, which includes a first variable-resistance nonvolatile storage element and a second variable-resistance nonvolatile storage element that are provided on the substrate and have a same structure and each of which holds conductance; and a write circuit that rewrites the conductance of the first variable-resistance nonvolatile storage element by applying a first voltage pulse having a first voltage to the first variable-resistance nonvolatile storage element, and rewrites the conductance of the second variable-resistance nonvolatile storage element by applying a second voltage pulse having a second voltage to the second variable-resistance nonvolatile storage element, the second voltage being different from the first voltage.
An artificial intelligence processing device comprising:
A weight coefficient writing method for an artificial intelligence processing device that includes a first variable-resistance nonvolatile storage element and a second variable-resistance nonvolatile storage element that have a same structure and hold, as conductance, a weight coefficient for a multiply-accumulate operation, the weight coefficient writing method comprising:
Dependencies are inferred from the claim text.