Temperature drift compensation of photoresistors

A method for determining at least one compensated detector signal for at least one photodetector, wherein the at least one photodetector comprises at least one detector element configured for generating at least one detector signal depending on an illumination of the at least one detector element, wherein the at least one detector element is configured as a photoconductor, the method comprising the following steps:

• a) determining at least one dark detector resistance by using the at least one detector element and inhibiting illumination of the at least one detector element;
• b) generating at least one bright detector signal by using the at least one detector element and allowing illumination of the at least one detector element;
• and
• c) determining at least one compensated detector signal for compensating at least one temperature drift of the at least one detector element by using at least one evaluation unit for evaluating the at least one dark sensor resistance and the at least one bright detector signal,
• wherein in step c) the at least one compensated detector signal is determined by using Equation (1):
• S
• comp
• (
• T
• 0
• ,
• λ
• )
• =
• S
• ⁡
• (
• T
• 0
• +
• Δ
• ⁢
• T
• ,
• λ
• )
• ⁢
• (
• 1
• -
• Γ
• ⁢
• γ
• R
• ⁢
• Δ
• ⁢
• T
• α
• ⁡
• (
• r
• 0
• ,
• λ
• )
• +
• Γ
• ⁢
• γ
• R
• ⁢
• Δ
• ⁢
• T
• )
• ,
• (
• 1
• )
• wherein Scomp(T0,λ) refers to the compensated detector signal at a first temperature T0 of the at least one detector element, wherein λ refers to a wavelength of optical radiation illuminating the at least one detector element, wherein S(T0+ΔT, λ) refers to a bright detector signal at a second temperature T0+ΔT of the at least one detector element, wherein ΔT refers to a temperature change of the at least one detector element, wherein a temperature change ΔT is determined by measuring the at least one dark detector resistance RD of the at least one detector element, wherein α(T0,λ) refers to a resistive responsivity of the at least one detector element at the first temperature T0 of the at least one detector element, wherein Γ is defined as
• Γ
• =
• γ
• α
• γ
• R
• ,
• wherein γα refers to a predetermined resistive responsivity coefficient of the at least one detector element, and wherein γR refers to a predetermined dark resistance coefficient of the at least one detector element.