Metal complexes having triazenido ligands and uses thereof for depositing metals from the gas phase

Use according to at least one of the preceding claims, wherein the metal complex has at least one ligand L with the formula R1—N3—R2, in which R1 and R2 are alkyl radicals.

Use according to at least one of the preceding claims, wherein the metal complex is homoleptic and only has ligands L of the formula R1—N3—R2.

Use according to at least one of the preceding claims, wherein the metal complex is heteroleptic.

Use according to at least one of the preceding claims, wherein the radicals R1 and R2 have 1 to 30 C atoms independently of one another.

Use according to at least one of the preceding claims, wherein all the R1 and R2 radicals of the metal complex are alkyl radicals.

Use according to at least one of the preceding claims, wherein the metal complex has at least one ligand L that is tert-butyl-N3-tert-butyl or tert-Butyl-N3-Methyl.

Use according to at least one of the preceding claims, wherein the metal M is selected from In, Co, Cu, Ru, Al, Ga, Tl, and La.

Use according to at least one of the preceding claims, wherein the metal complex is sublimable or vaporizable without decomposition taking place.

Use according to at least one of the preceding claims, wherein the molecular weight of the metal complex is less than less than 600 g/mol.

Use according to at least one of the preceding claims, wherein the metal complex is thermally stable at 100° C. and/or decomposes in a temperature range from 100° C. to 400° C., wherein the temperature is determined at atmospheric pressure or at reduced pressure in the range from 10−3 to 900 mbar.

Use according to at least one of the preceding claims, wherein the deposition of the metal or of the compound of the metal from the gas phase is effected at reduced pressure in the range from 10−3 to 900 mbar, preferably in the range from 10−2 to 1 mbar, and in particular 10−2 mbar.

Method for the production of coated substrates, comprising the steps of:

• (a) providing a metal complex according to at least one of the preceding claims, and
• (b) depositing the metal or a compound of the metal on the surface of the substrate by metal-organic vapor deposition.

Method or use according to at least one of the preceding claims, wherein the method is a metal-organic chemical vapor deposition (MOCVD).

Method or use according to at least one of the preceding claims, wherein the method is a metal-organic gas phase epitaxy (MOVPE).

Method or use according to at least one of the preceding claims, wherein the compound of the metal is selected from semiconductor compounds, alloys, nitrides, phosphides, arsenids and silicides.

Method or use according to at least one of the preceding claims, wherein the metal complex is sublimated or evaporated without decomposition taking place.

Method or use according to at least one of the preceding claims, wherein the metal complex decomposes in the gas phase at a temperature which is not more than 100° C. above the sublimation temperature or evaporation temperature.

Method for the production of a compound of the formula R1—(N3)A-R2 in a reaction mixture that contains the compounds R1—N3 and AR2, wherein A is an alkaline metal.

Compound selected from tert-Butyl-(N3)H—CH3 and organo-alkaline metal salts of the formula R1—(N3)A-R2, wherein R1 and R2 are alkyl radicals and A is an alkaline metal, especially Li, Na or K.