Ohmic contact formation in a sic-based electronic device

A method, comprising:

• forming a plurality of first doped regions in a substrate, the plurality of first doped regions each having a first conductivity type and a first surface coplanar with a first surface of the substrate;
• forming a plurality of second doped regions each in a respective one of the plurality of first doped regions, the plurality of second doped regions each having a second conductivity type different from the first conductivity type and a first surface coplanar with the first surface of the substrate;
• forming a first gate on the first surface of the substrate, the first gate overlapping a first edge of a first of the plurality of second doped regions and a first edge of a second of the plurality of second doped regions;
• forming a first ohmic contact in the first of the plurality of second doped regions;
• forming a first dielectric layer on the first gate;
• and
• forming a metal layer on the first surface of the substrate, the first dielectric layer separating the second of the plurality of second doped regions from the metal layer.

A method, comprising:

• forming a plurality of first doped regions in a substrate, the plurality of first doped regions each having a first surface coplanar with a first surface of the substrate;
• forming a plurality of second doped regions each in a respective one of the plurality of first doped regions, the plurality of second doped regions each having a first surface coplanar with the first surface of the substrate;
• forming a first gate on the first surface of the substrate, the first gate partially overlapping a first of the plurality of second doped regions and a second of the plurality of second doped regions;
• forming a second gate on the first surface of the substrate, the second gate partially overlapping the first of the plurality of second doped regions;
• forming a first ohmic contact in the first of the plurality of second doped regions, the first ohmic contact being between the first and second gates along a first direction;
• and
• forming a third doped region in a first of the plurality of first doped regions, the third doped region being spaced along the first direction from the second of the plurality of second doped regions by a portion of the first of the plurality of first doped regions, the third doped region having a first surface coplanar with the first surface of the substrate.