Polycrystalline sic formed body and method for producing the same

Abstract

The present invention provides a polycrystalline SiC formed body having a low resistivity and a small variation in resistivity in a thickness direction thereof, and a method for producing the same. In the polycrystalline SiC formed body, a resistivity is 0.050 Ωcm or less, and an average value of peak intensity ratios (A/B) is 0.040 or less, and a difference between an average of peak intensity ratios on a growth surface side and an average of peak intensity ratios on a substrate surface side is 0.040 or less, wherein “A” represents a peak intensity within a range of wavenumber of 950 to 970 cm−1 of a Raman spectrum and “B” represents a peak intensity within a range of wavenumber of 780 to 800 cm−1 in a Raman spectrum.

Dependencies are inferred from the claim text.