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US 2025/0169385 A1Published application
Semiconductor structure and operating method thereof
AssigneeMacronix International Co., Ltd.
InventorsFeng-Min LEE, Yu-Yu LIN, Po-Hao TSENG, Ming-Hsiu LEE
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Abstract
A semiconductor structure includes a gate, a channel structure, a gate insulating layer, a source, and a drain. The channel structure includes a threshold switching material, in which the channel structure includes a layered channel, a columnar channel, or a plurality of nanosheet channels. The gate insulating layer is disposed between the gate and the channel structure. The source is in direct contact with the channel structure. The drain is in direct contact with the channel structure.
Claims20
A semiconductor structure, comprising:
- a first gate;
- a channel structure comprising a threshold switching material, wherein the channel structure includes a layered channel, a columnar channel, or a plurality of nanosheet channels;
- a first gate insulating layer disposed between the first gate and the channel structure;
- a source being in direct contact with the channel structure;
- and
- a drain being in direct contact with the channel structure.
3 more elements
Dependencies are inferred from the claim text.