Quantum device and associated method for manufacturing
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorBenoit BERTRAND
Life of this patent
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Abstract
A quantum device includes a semiconductor layer adapted to form a two-dimensional array of quantum dots, the semiconductor layer having a front face, a dielectric, disposed on the front face of the semiconductor layer, first gates and second gates to control the quantum dots, the first gates and the second gates extending directly over the dielectric, each second gate intersecting the first gates, charge detectors, each charge detector including a conductive island, a source and a drain, the conductive island of each charge detector being formed between two adjacent first gates and directly over the dielectric.
Claims14
A quantum device comprising:
- a semiconductor layer adapted to form a two-dimensional array of quantum dots, the semiconductor layer having a front face
- a dielectric, disposed on the front face of the semiconductor layer,
- first lines of gates and second lines of gates to control the quantum dots, the first lines of gates and the second lines of gates extending directly over the dielectric, each second line of gates intersecting the first lines of gates, the first and second lines of gates defining a network of two-dimensional meshes, each two-dimensional mesh facing a quantum dot, the first lines of gates and the second lines of gates being lines of coupling gates,
- charge detectors, each charge detector comprising a conductive island, a source and a drain,
- the conductive island of each charge detector being formed at the level of a two-dimensional mesh, between two adjacent first lines of gates and directly over the dielectric, the charge detectors forming lines of charge detectors such that one among the source and the drain of each charge detector of a same line of charge detectors is in electrical contact with a same metallisation row, and such that the other among the drain and the source of each charge detector is common for each charge detector of a same line of charge detectors.
A method for manufacturing a quantum device comprising charge detectors, each charge detector comprising a conductive island, a drain and a source, the method comprising:
- providing a semiconductor layer adapted to form a two-dimensional array of quantum dots, said semiconductor layer having a front face, said semiconductor layer comprising a dielectric disposed on the front face and first lines of gates to control the quantum dots, the first lines of gates extending directly over the dielectric, the first lines of gates being lines of coupling gates,
- coating the flanks and upper face of each first line of gates to house each first line of gates under an insulating recess,
- defining, the conductive islands from the first coated lines of gates, each conductive island extending between two adjacent first lines of gates and directly over the dielectric,
- forming, from the conductive islands defined, second lines of gates to control, with the first lines of gates, the quantum dots, each second line of gates extending directly over the dielectric and intersecting the first lines of gates, the first and second lines of gates forming a network of two-dimensional meshes on the dielectric, the second lines of gates being lines of coupling gates, the charge detectors forming lines of charge detectors such that one among the source and the drain of each charge detector of a same line of charge detectors is in electrical contact with a same metallisation row, and such that the other among the drain and the source of each charge detector is common for each charge detector of a same line of charge detectors.
Dependencies are inferred from the claim text.