Josephson Junction Device and Method of Manufacture Thereof

A method of manufacturing a Josephson junction device having a substrate in a first region, a third region, and a second region between the first and second regions, the method comprising:

• in the first, second, and third regions, forming a first superconductive layer on the substrate;
• in the first, second, and third regions, forming an oxide layer on the first superconductive layer;
• in the first, second, and third regions, forming a second superconductive layer on the oxide layer;
• in the first region, performing an etching process to remove the oxide layer and the second superconductive layer therein while maintaining at least some of the first superconductive layer therein;
• forming a mask on the first superconductive layer in the first region and on the second superconductive layer in the second and third regions;
• and
• using the mask, removing, by the etching process, from the third region, the first superconductive layer and the oxide layer.

A method of producing a Josephson junction device having a second region between first and third regions, the method comprising:

• in first, second, and third regions, forming a first superconductive layer on a substrate;
• in at least the second and third regions, forming an oxide layer on the first superconductive layer and forming a second superconductive layer on the oxide layer;
• forming a mask covering the second region and only parts of the third region;
• and
• performing an etching process that
• removes the first superconductive layer and the oxide layer from the third region, and
• preserves at least some of the second superconductive layer in the third region.