Photoelectric conversion element, photodetector, and photodetection system
AssigneesSony Semiconductor Solutions Corporation, Sony Group Corporation
InventorsYushiro NAKAGOME, Yosuke SAITO, Masato KANNO
Life of this patent
Estimating the term…
Loading patent…
AssigneesSony Semiconductor Solutions Corporation, Sony Group Corporation
InventorsYushiro NAKAGOME, Yosuke SAITO, Masato KANNO
Estimating the term…
Provided is a photoelectric conversion element, a photodetector, and a photodetection system that make it possible to improve photoresponsivity. The photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode (11); a second electrode (13) disposed to be opposed to the first electrode (11); and a photoelectric conversion layer (12) provided between the first electrode (11) and the second electrode (13), and including a hole-transporting material having a crystalline property, at least one type of dye material, and an electron-transporting material, in which a density of a trap formed at an interface between the at least one type of dye material and the electron-transporting material is zero times or more and five times or less than a density of a trap formed at an interface between the hole-transporting material and the electron-transporting material.
A photoelectric conversion element comprising:
A photodetector comprising a plurality of pixels each including a photoelectric conversion element that includes one or a plurality of photoelectric conversion sections,
A photodetection system comprising:
Dependencies are inferred from the claim text.