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US 2025/0169264 A1Published application
Stretchable otft element, skin attachable temperature sensor and the manufacturing method thereof
AssigneeUniversity-Industry Cooperation Group of Kyung Hee University
InventorsJin Young OH, Min Woo JEONG, Jun Su KIM
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Abstract
Provided is a stretchable organic thin film field effect transistor (OTFT) element with high sensitivity and low power characteristic as a temperature sensor element that resolved instability caused by charge trap density induced as strain or heat in a sub-threshold region.
Claims20
A stretchable organic thin film field effect transistor (OTFT) element comprising:
- a gate electrode;
- a dielectric layer stacked with elastomer on the gate electrode;
- an active layer stacked on the dielectric layer;
- and
- a source electrode and a drain electrode formed to be spaced part from each other on the active layer,
- wherein the active layer is formed as an elastomer matrix organic semiconductor nanofiber blend film in which organic semiconductor nanofiber is mixed within an elastomer matrix.
3 more elements
A skin attachable temperature sensor comprising:
- a substrate formed of elastomer;
- a first electrode layer formed on the substrate by including at least one gate electrode;
- a dielectric layer stacked with the elastomer on the substrate and the first electrode layer;
- an active layer stacked on the dielectric layer;
- a second electrode layer stacked on the active layer by including at least one source electrode and drain electrode;
- and
- a capsule layer configured to seal the top of the second electrode layer,
- wherein the active layer is formed as an elastomer matrix organic semiconductor nanofiber blend film in which organic semiconductor nanofiber is mixed within an elastomer matrix.
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A method of manufacturing a skin attachable temperature sensor, the method comprising:
- a substrate, dielectric layer, and active layer manufacturing operation of simultaneously or sequentially manufacturing a substrate, a dielectric layer, and an active layer on each of separated wafers or glass substrates;
- a first electrode layer forming operation of forming stretchable at least one gate electrode on the substrate through thermal evaporation under vacuum using a patterning mask;
- a second electrode layer forming operation of forming at least one source electrode and drain electrode on the active layer;
- and
- a dielectric layer and active layer transferring operation of transferring the dielectric layer on the substrate on which the first electrode layer is formed and transferring the active layer on the dielectric layer such that the second electrode layer is present on the top,
- wherein, in the substrate, dielectric layer, and active layer manufacturing operation, the active layer is manufactured by mixing organic semiconductor nanofiber of Formula 1 below and elastomer of Formula 2 below in a solvent that contains a material of Formula 3 below.
3 more elements
Dependencies are inferred from the claim text.