Flip-chip light-emitting diode

A flip-chip light-emitting diode (LED), comprising:

• an epitaxial structure which includes a first semiconductor layer, an active layer and a second semiconductor layer that are sequentially disposed on one another in such order, said epitaxial structure having a first region and a second region that are independent from each other, wherein said epitaxial structure is formed with a plurality of first holes at said first region and a plurality of second holes at said second region, each of said first and second holes extending through said second semiconductor layer and said active layer and terminating at and partially exposing said first semiconductor layer;
• a first pad electrode which is disposed on said first region and which is electrically connected to said first semiconductor layer;
• and
• a second pad electrode which is disposed on said second region and which is electrically connected to said second semiconductor layer,
• wherein a surface of said first semiconductor layer exposed by said first holes has a total area which is greater than a total area of a surface of said first semiconductor layer exposed by said second holes.