Infrared light-emitting diode, infrared light-emitting diode package, and light-emitting device

Abstract

Disclosed are an infrared light-emitting diode, an infrared light-emitting diode package, and a light-emitting device. The infrared light-emitting diode includes a semiconductor epitaxial lamination layer, a first electrode, and an adhesion layer. The semiconductor epitaxial lamination layer includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first type semiconductor layer includes a first ohmic contact layer, a first window layer, and a first cladding layer. The first electrode located on the first type semiconductor includes a main electrode and multiple extending electrodes. The extending electrodes extend outward from the main electrode. The adhesion layer is located between the first window layer and the main electrode. The present invention enhances the adhesion between the first electrode and the semiconductor epitaxial lamination layer via the adhesion layer, improves the bonding force of the electrode, thereby elevating the reliability of the infrared light-emitting diode.

Dependencies are inferred from the claim text.