Deep uv light emitting diode
AssigneeSeoul Viosys Co., Ltd.
InventorsTae Gyun KIM, Kyu Ho LEE
Life of this patent
Estimating the term…
Abstract
A deep UV light emitting diode includes a substrate, an n-type semiconductor layer located on the substrate, a mesa disposed on the n-type semiconductor layer, and including an active layer and a p-type semiconductor layer, an n-ohmic contact layer in contact with the n-type semiconductor layer, a p-ohmic contact layer in contact with the p-type semiconductor layer, an n-bump electrically connected to the n-ohmic contact layer, and a p-bump electrically connected to the p-ohmic contact layer. The mesa includes a plurality of vias exposing a first conductivity type semiconductor layer.
Claims10
A UV light emitting device, comprising:
- a mount substrate including electrode pads;
- a light emitting diode disposed on the mount substrate, wherein the light emitting diode includes:
- an n-type semiconductor layer;
- a mesa located adjacent to the n-type semiconductor layer, the mesa including an active layer and a p-type semiconductor layer;
- an n-ohmic contact layer in contact with the n-type semiconductor layer;
- a p-ohmic contact layer in contact with the p-type semiconductor layer;
- an n-bump electrically connected to the n-ohmic contact layer;
- and
- a p-bump electrically connected to the p-ohmic contact layer, wherein:
- the mesa includes a plurality of vias exposing the n-type semiconductor layer,
- the mesa has an elongated rectangular shape along a longitudinal direction,
- the vias are arranged parallel to one another in a direction perpendicular to the longitudinal direction, and
- the n-ohmic contact layer is located adjacent to the n-type semiconductor layer exposed around the mesa and adjacent to the n-type semiconductor layer disposed in the vias, respectively.
A deep UV light emitting diode, comprising:
- a first conductivity type semiconductor layer;
- a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer;
- a first conductivity type ohmic contact layer in contact with the first conductivity type semiconductor layer;
- and
- a second conductivity type ohmic contact layer in contact with the second conductivity type semiconductor layer, wherein:
- the mesa includes a plurality of vias exposing the first conductivity type semiconductor layer,
- the mesa has an elongated rectangular shape along a longitudinal direction,
- the mesa has a mirror symmetrical structure with respect to a first plane passing through a center of the mesa along the longitudinal direction of the mesa, and
- with respect to a second plane passing through the center of the mesa along a direction perpendicular to the longitudinal direction of the mesa.
A deep UV light emitting diode, comprising:
- an n-type semiconductor layer;
- a mesa disposed on the n-type semiconductor layer, including an active layer and a p-type semiconductor layer, and including a plurality of vias exposing the n-type semiconductor layer;
- an n-ohmic contact layer contacting the n-type semiconductor layer exposed around the mesa and the n-type semiconductor layer exposed to the plurality of vias, respectively;
- first reflection layers covering upper and side surfaces of the n-ohmic contact layer and located lower than the mesa;
- a second reflection layer connected to the first reflection layers and extending to an upper region of the mesa from the first reflection layers;
- an n-bump connected to the second reflection layer;
- and
- a p-bump electrically connected to the p-type semiconductor layer, wherein the n-ohmic contact layer, the first reflection layers, and the second reflection layer include aluminum.
Dependencies are inferred from the claim text.