Light emitting device and light emitting module including the same

A light emitting device comprising:

• a semiconductor layer comprising a first window layer doped with a first dopant, a second window layer doped with a second dopant, and an active layer disposed between the first window layer and the second window layer;
• an insulation layer covering the semiconductor layer and comprising an opening exposing a region of at least a window layer of the first window layer or the second window laver;
• a first electrode electrically connected to the first window layer;
• and
• a second electrode electrically connected to the second window layer,
• wherein a side surface of the active layer is located more inwardly than an outermost side surface of the first window layer.

A light emitting device comprising:

• a semiconductor layer comprising a first window layer doped with a first dopant, a second window layer doped with a second dopant, and an active layer disposed between the first window layer and the second window layer;
• an insulation layer covering the semiconductor layer and comprising an opening exposing a region of at least a window layer of the first window layer or the second window layer;
• a first electrode electrically connected to the first window layer;
• and
• a second electrode electrically connected to the second window layer,
• wherein the semiconductor layer comprises side irregularities formed on a side surface between an upper surface of the first window layer and a lower surface of the second window layer.