Ferroelectric modulation of quantum emitters

A single photon emitter comprising

• a poly(vinylidene fluoride-co-trifluoroethylene P(VDF-TrFE) film formed on a substrate, wherein the P(VDF-TrFE) film includes a nanoindentation formed therein;
• a tungsten disulfide (WS2) monolayer formed on a first portion of the P(VDF-TrFE) film, wherein the WS2 monolayer extends into the nanoindentation;
• a graphite layer formed over a portion of the WS2 monolayer and a second portion of the P(VDF-TrFE) film;
• and
• a conductor adjacent to the graphite layer and adapted to selectively apply a bias voltage to the graphite layer.

A method of forming a single photon emitter comprising

• providing a ferroelectric material or forming a ferroelectric film on a substrate;
• providing a layer containing a single photon emitter or growing a layer containing a single photon emitter on a first portion of the ferroelectric material or ferroelectric film;
• forming a nanoindentation in the ferroelectric material or ferroelectric film, wherein the layer extends into the nanoindentation;
• forming a conductive layer over a portion of the layer;
• and
• positioning a conductor adjacent to the conductive layer to selectively apply a bias voltage to the conductive layer.

A single photon emitter heterostructure comprising

• a layer containing a single photon emitter formed on a substrate;
• a ferroelectric film formed on the single photon emitter layer;
• a conductive contact layer formed on the ferroelectric film;
• and
• an electrical contact adapted to selectively apply a bias voltage to the conductive contact layer.